FDC608PZ features ? ?5.8 a, ?20 v. r ds(on) = 30 m ? @ v gs = ?4.5 v r ds(on) = 43 m ? @ v gs = ?2.5 v ? low gate charge ? high performance trench technology for extremely low r ds(on) ? supersot tm ?6 package: small footprint (72% smaller than standard so ?8 ) low profile (1mm thick). d d d s d g supersot -6 tm absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 12 v drain current ? continuous (note 1a) ?5.8 i d ? pulsed ?20 a maximum power dissipation (note 1a) 1.6 p d (note 1b) 0.8 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r jc thermal resistance, junction-to-case (note 1) 30 c/w package marking and ordering information device marking device reel size tape width quantity .608z FDC608PZ 7?? 8mm 3000 units 6 5 4 1 2 3 smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?10 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gss gate?body leakage v gs = 12 v, v ds = 0 v 10 a on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?1.0 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5v, i d = ?5.8 a v gs = ?2.5v, i d = ?5.0 a v gs = ?4.5v,i d = ?5.8a,t j =125 c 26 38 35 30 43 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?20 a g fs forward transconductance v ds = ?10 v, i d = ?5.8 a 22 s dynamic characteristics c iss input capacitance 1330 pf c oss output capacitance 270 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 230 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 12 ? switching characteristics (note 2) t d(on) turn?on delay time 13 24 ns t r turn?on rise time 8 16 ns t d(off) turn?off delay time 91 145 ns t f turn?off fall time v dd = ?10 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 60 96 ns q g total gate charge 17 23 nc q gs gate?source charge 3 nc q gd gate?drain charge v ds = ?10 v, i d = ?5.8 a, v gs = ?4.5 v 6 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?1.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?1.3 a (note 2) ?0.7 ?1.2 v t rr diode reverse recovery time i f = ?5.8 a, d if /d t = 100a/s 40 60 ns q rr diode reverse recovery charge i f = ?5.8 a, d if /d t = 100a/s 15 23 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mou nting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a. 78c/w when mounted on a 1in 2 pad of 2oz copper on fr-4 board. b. 156c/w when mounted on a minimum pad. 2. pulse test: pulse width 300 s, duty cycle 2.0% FDC608PZ smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
